Abstract
A two-terminal silicide Schottky-barrier collector phototransistor (SBCPT) integrated on a silicon-on-insulator waveguide was proposed and demonstrated using low-cost standard silicon processing technology. Owing to the current gain through the transistor action, the SBCPT at 5 V bias achieves a responsivity around 1550 nm of ∼150 mA/W, which is approximately 17.6-fold larger than the corresponding Schottky-barrier photodiode (SBPD) having the same silicide absorber. The current gain thereby the responsivity of SBCPT may be further improved simply by reducing the base width. Moreover, the SBCPT at negative bias exhibits a very low dark current of ∼12 pA owing to the presence of a reversely biased Si p-n junction while with the responsivity and speed only slightly degraded as compared to the SBPD counterpart. The proposed detector can be utilized as an in-line or terminal optical monitor in low-cost all-silicon electronic-photonic integrated circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.