Low bandgap fused-ring electron acceptors based on π-expended asymmetric benzotrithiophene core: Regulating aggregation and photovoltaic performance by side chain isomerization

Abstract

Asymmetric molecular design strategy has received increasing attention in the development of fused-ring electron acceptors (FREAs). Benzo [2,1-b: 3,4-b’: 5,6-b”] trithiophene (asym-BTT) with intrinsically asymmetric and electron-rich π-plane is an ideal unit to construct asymmetric FREAs, whereas asym-BTT-based FREAs are still very limited. Herein, two asymmetric FREAs based on the π-expended asym-BTT fused-core with para-hexylphenyl and meta-hexylphenyl side chains (p-FABTT and m-FABTT) have been developed. Owing to strong electron-donating ability and planar configuration of π-expended asym-BTT fused-core, two acceptors exhibit effective intramolecular charge transfer and intermolecular interaction, leading to near infrared absorption above 900 nm with narrow bandgaps of around 1.34 eV. Although the same π-conjugated backbones of two acceptors afford the nearly identical energy levels and solution absorptions, side chain isomerization leads to significant differences in film absorption, molecular stacking orientation and crystallinity. In neat film, the m-FABTT with meta-hexylphenyl side chains exhibits slightly redshifted absorption with stronger 0-0 absorption peak from J-aggregation compared to p-FABTT with para-hexylphenyl side chains. More orderly molecular stacking and stronger π-π interactions with shorter π-π stacking distance in both the neat film and active layer can be observed for m-FABTT. When blended with donor polymer D18, m-FABTT exhibits broadened spectral region and proper phase separation morphology for effective exciton dissociation and charge transport. Therefore, the OSCs device based on m-FABTT achieves an optimal PCE of 7.14 % with a higher JSC of 15.39 mA cm−2 and an improved FF of 57.96 % as comparing with p-FABTT-based device (a PCE of 4.81 % with a JSC of 11.67 mA cm−2 and a FF of 48.51 %).