Low- and high-field transport studies for semiconducting carbon nanotubes

Abstract

We calculate low- and high-field electron transport characteristics for semiconducting, single-wall, zigzag carbon nanotubes with diameters ranging from small to relatively large. The Boltzmann transport equation is solved directly using an iterative technique and indirectly by the ensemble Monte Carlo method. The basis for the transport calculation is provided by electronic structure calculations within the framework of a simple tight-binding model. Scattering mechanisms considered are due to the electron–phonon interactions involving longitudinal acoustic, longitudinal optic, and radial breathing-mode phonons. Results show significant effects of tube diameter on both low- and high-field transport characteristics.