Abstract
This paper concerns a new design of RF MEMS switch combined with an innovative process which enable low actuation voltage (<5 V) and avoid stiction. First, the structure described with principal design issues, the corresponding antistiction system is presented and FEM simulations are done. Then, a short description of the process flow based on two non polymer sacrificial layers. Finally, RF measurements are presented and preliminary experimental protocol and results of anti-stiction validation is detailed. Resulting RF performances are -30 dB of isolation and -0.45 B of insertion loss at 10 GHz.
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