Loss Behaviors of Si Substrate during Growth of the SiC Films Prepared by Hydrogen Plasma Sputtering

Abstract

Loss behaviors of Si substrates during the growth of β-SiC films, which are grown on the (111) Si substrates kept at 700°C by hydrogen plasma sputtering of the SiC target, are studied by changing the thickness of the obtained films. The Si loss results in hollow voids with a double-deck structure which are observed at the surface of Si substrate. The Si loss roughens the surface of the Si substrate, and influences the properties of the obtained SiC films.