Abstract
Metamorphic growth of InP on GaAs has been used to tailor the recovery time of 1.55μm semiconductor saturable absorber mirrors. By decreasing the thickness of the InP “lattice reformation layer” grown between a GaAs-based distributed Bragg reflector and the active region, we were able to purposely reduce the recovery time. For thickness of the reformation layer below 200nm, the semiconductor saturable absorber mirrors exhibited a short absorption recovery time enabling a robust, self-starting passive mode-locked operation of an erbium-doped fiber laser. We are also reporting preliminary results on the stability of the saturable absorbing mirrors parameters after rapid thermal annealing.
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