Abstract
A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize high-speed operation at high temperature. The maximum output power of 4.2 mW with a low resistance of 65 Omega has been obtained at 25degC. Operations of 10 Gb/s have been achieved over the temperature range of 25degC-85degC, with operation current of 6.9 mA and extinction ratio of 5.0 dB.
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