Abstract
A novel approach for long-wavelength InP-based verticalcavity surface-emitting laser diodes using buried tunnel junctions is presented. A laterally structured tunnel junction with subsequent regrowth results both in efficient current confinement and sharply reduced series resistance because of the substitution of high-resisistive p-doped layers by low-resistive n-doped layers. Furthermore, strong optical confinement is achieved because of the laterally differing cavity length. Significantly improved performance with respect to output power (>1 mW), quantum efficiency (>20%), series resistance (<100Ω) and threshold current (2kAcm−2) can be obtained at room temperature continous wave operation.
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