Abstract
A long-time constant-capacitance deep level transient spectroscopy (LT-CC-DLTS) method has been established to investigate the energy distribution D it and the capture-cross-section σ n/p of states at the interface of 6H SiC/MOS structures. A comparison of dry and wet oxidation (1120°C) reveals a change in the distribution of interface states and a different magnitude of capture-cross-sections indicating that the interface states consist of at least two types of defects.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
