Abstract
AbstractLong‐lifetime photoconductivity is observed in Czochralski‐grown oxygen‐rich heattreated n‐ and p‐type silicon crystals. It appears due to a slow electron (in Cz n‐Si) and hole (in Cz p‐Si) recombination via two kinds of oxygen‐induced recombination centres. Dependences of the long‐lifetime photoconductivity on the oxygen content, excitation intensity and temperature are presented. Possible models to explain an appearance of the long‐lifetime photoconductivity in Cz n‐ and p‐Si are discussed. The data presented are important for understanding the long‐time photoeffects in semiconductors and for elucidating the origin and structure of oxygen‐induced recombination centres in silicon.
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