Abstract
In/sub 0.35/Ga/sub 0.65/N/sub y/As/sub 1-y//GaAs (y/spl sim/0-3%) quantum well (QWs) structures grown by MOVPE with room temperature photoluminescence in the 1.18-1.59 /spl mu/m range and their broad area laser characteristics are presented. Infinite threshold current densities of 0.095, 1.22 and 2.3 kA/cm/sup 2/ at 1.18, 1.22 and 1.24 /spl mu/m emission wavelengths, for laser diodes with 0, 0.4 and 0.5% of nitrogen, were obtained, respectively. A characteristic temperature (T/sub 0/) value of 80 K was determined for as-cleaved InGaAs QW lasers, while a T/sub 0/ value as high as 117 K was obtained for InGaNAs (y/spl sim/0.4%) QW lasers in the 20-80/spl deg/C temperature range.
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