Abstract
The high demand for 1.3-1.55 /spl mu/m lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane lasers operating out to 1.49 /spl mu/m, with threshold current density of 930 A/cm/sup 2/ per quantum well and pulsed power up to 70 mW, are presented. In addition, photoluminescence out to 1.6 /spl mu/m from GaInNAsSb quantum wells was observed.
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