Abstract
Long-range-ordered CdTe nanodot arrays with controlled size and density were grown on GaAs substrates by using molecular-beam epitaxy with ultrathin nanoporous alumina masks. The CdTe∕GaAs nanodot arrays were grown as replicas of the self-assembled porous alumina masks in spite of the large lattice mismatch between GaAs and CdTe. Using ultrathin alumina masks (ca. 200nm in thickness), we fabricated CdTe nanodot arrays with uniform dot sizes in the ranges of 35nm (with a density of ∼2.5×1010cm−2) and 80nm (with a density of ∼8.1×109cm−2). This is the report on controlling both the size and the density of II-VI/III–V heterostructure semiconductor nanodots.
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