Abstract
We present a spectroscopic ellipsometry study of the layer-by-layer growth of intrinsic and doped microcrystalline silicon layers on hydrogenated amorphous silicon films. Particular attention has been paid to the effects of the porosity of the a-Si:H substrates, process temperature, hydrogen plasma treatment time, and doping on the μc-Si growth. Our results show that it is possible to produce thin (≈20 nm) and highly crystallized films (crystalline fraction ≥96%). Highly conductive p- and n-doped μc-Si films have also been obtained. The most striking result concerning μc-Si growth is that atomic hydrogen modifies the a-Si:H substrates on which μc-Si films are produced. This modification of the a-Si:H substrate can extend over 50 nm in depth. The extent and amplitude of this modification are discussed in terms of the process conditions and substrate film type (dense or porous a-Si:H).
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