Abstract
Hydrogenated microcrystalline silicon (μc-Si:H) thin films were deposited by inductively coupled plasma assistant magnetron sputtering (ICP-MS) in an Ar-H2 gas mixture. The role of ion bombardment in the growth of μc-Si:H films was studied with increasing negative bias voltages on the substrate holder from 0 to −100 V. Raman scattering, X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy (TEM) were performed to investigate the microstructure changes of deposited Si films. Raman scattering showed that the high energy ion bombardment resulted in crystalline degradation of Si films. The XRD results showed the decrease and even elimination of preferential growth orientation of crystalline Si films with ion bombardment energy increase. The SiH bonding configuration changes and the increase of bonded hydrogen concentration were determined with the analysis of FTIR spectra. Furthermore, the dramatic evolution of cross-sectional morphology of Si thin films was detected by TEM observation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
