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Abstract
Reactive magnetron co-sputtering of two confocal SiO 2 and Er 2O 3 cathodes in argon–hydrogen plasma was used to deposit Er-doped Si-rich SiO 2 layers. The effects of the deposition conditions (such as RF power applied on each cathode and total plasma pressure) and annealing treatment (temperature and duration) on structural, compositional and photoluminescence (PL) properties of the layers were examined. It was found that a significant enhancement of both Er 3+ PL intensity and emission lifetime up to 9 ms have been reached through monitoring of the conditions of both deposition process and annealing treatment. The effective absorption cross section and the fraction of Er ions coupled to Si clusters were analyzed. It was shown an increase of the fraction of Er 3+ ions coupled to Si up to 11%.
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