Long incubation times for selective epitaxial growth of silicon using silane only

Abstract

Following earlier work, extremely long incubation times in the selective epitaxial growth of silicon using silane only as the source gas are reported. The incubation time is defined as the total deposition time that elapses before deposition of polysilicon on the masking dielectric begins to occur. Fully selective silicon layers greater than 1 μm thick have been grown on [100] silicon using a silicon dioxide mask, with incubation times in excess of 30min. No significant loading effects were observed when using different silicon-to-masking oxide area ratios.