Abstract
AbstractThe possibilities for current stabilization by means of MOS transistors are investigated. It is shown that with a long enough channel, considerable stabilization can be attained. A coefficient, characterizing the stabilization, is introduced and its dependence on the channel length, Si resistivity and voltage interval is found. The data obtained might be found useful in design of LOMOST current stabilizer with an optimal ratio of the transconductance to the stabilization degree for different purposes.
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