Abstract
Long-channel In0.7Ga0.3As/In0.52Al0.48As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with Lg = 4 μm exhibits excellent maximum transconductance (gm_max ) in excess of 0.48 mS/μm at V DS = 0.95 V, together with reasonably good electrostatic integrity of drain-induced-barrier-lowering < 40 mV/V and subthreshold-swing <100 mV/decade. Besides, the effective mobility (μn_eff ) of the same device has been extracted, revealing that the device in this work yields excellent μn_eff = 6960 cm2/V-s at room temperature. To the knowledge of the authors, the value of μn_eff in this work is the highest in any surface-channel InGaAs MOSFET technology.
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