Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Abstract

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on TiN porous network templates formed by in situ thermal annealing of Ti in ammonia. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are longer than ever reported for GaN. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction (XRD) (101¯2) peak decreases considerably with the use of TiN layer and with increasing in situ annealing time, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.