Abstract

This paper discusses challenges of implementing embedded dosimeters into larger CMOS systems-on-chip (SoCs) in deep-scaled CMOS technologies (with gate lengths smaller than 90 nm) where the high level of intrinsic radiation hardness and limited availability of floating gate structures prohibit realizing a highly sensitive radfet-type dosimeter. We therefore propose a novel Logic-I/O Threshold Comparison Dosimeter, which offers compatibility with advanced CMOS technology nodes and co-integration with other circuitry. The proposed dosimeter estimates dose level by directly comparing threshold voltages between I/O and logic devices. Furthermore, through carefully sizing the logic and I/O devices and designing the vital comparator circuitry, we can also achieve required temperature independence for deep-space applications. A prototype is then fabricated in 65-nm CMOS, and measured up to 75 Mrad(Si) of total ionized dose at a Cobalt 60 ( $\gamma $ ) facility.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.