Abstract
In this paper, we investigate a graphene nanoribbon FET (GNRFET) with locally embedded Stone–Wales (SW) defects near its drain contact. The simulation procedure is preformed via the self-consistent solution of the full 3-D Schrodinger and Poisson equations. Localized states induced by the SW defects are able to reduce ambipolar conduction and provide higher ON–OFF ratio and attenuated kink effect. Causing outgoing carriers decelerated in the channel, the use of such defected region in the GNRFET yields less vulnerability to hot-carrier degradation than its conventional counterpart. Our proposed structure also enhances the device transconductance, making it more appealing in high-frequency applications.
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