Abstract
Infrared absorption spectra of proton and deuteron implanted GaP single crystals reveal two hydrogen induced modes with frequencies of 1839 and 2204 cm −1 and six deuterium induced modes with frequencies of 1260, 1295, 1333, 1602, 1635 and 1670 cm −1. From a comparison of these mode frequencies with those reported for proton and deuteron implanted GaAs and InP single crystals it follows that vibrating defects with both GaH(D) and PH(D) bonds are formed. The number of vibrating centres is found to be proportional to the damage density.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call