Abstract
Enhanced spectra photoresponse was realized in Al0.4Ga0.6N metal-semiconductor-metal solar-blind ultraviolet photodetectors (PDs) by using Al nanoparticals (NPs). The fabricated AlGaN solar-blind PDs exhibit high responsivity and low dark current. By forming different diameters of Al NPs on AlGaN surface, the peak responsivity of the devices appears more than two-fold increase compare to the PDs without Al NPs under the bias voltage of 8 V, and the device with 150 nm Al NPs reaches the highest responsivity of 0.30 A W−1. In order to explore the enhancement mechanism of AlGaN solar-blind PDs with Al NPs, the extinction spectra and electric field distribution of Al NPs were calculated using finite-difference time-domain (FDTD) simulation based on the quasi-particle approximation, which demonstrates that the significant enhancement performance is due to the localized surface plasmon (LSP) effect of Al NPs. The approach provided in this work is promising for the fabrication of high performance of AlGaN-based solar-blind ultraviolet PDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
