Abstract
We present low temperature photoluminescence spectra taken from an 11Å ZnSe quantum well in ZnS barriers. The samples are grown by the technique of photo-assisted vapour phase epitaxy (PAVPE) and the spectra show evidence for interface disorder. The observed dependences of the excitonic luminescence on excitation power and temperature are interpreted by a model involving excitonic localization below an exciton mobility edge. This mobility edge is measured for these samples to be 6 meV below the free exciton energy in the ideal quantum well.
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