Abstract
Localized defects are investigated in p-CdTe:Cu doped by copper incorporation during Bridgman growth. The results of Hall measurements, admittance spectroscopy and photoluminescence (PL) are similar to those obtained from samples Cu-doped by ion-implantation or diffusion : copper is incorporated as a substitutionnal acceptor in Cd site with an activation energy 0.15 eV. The as-grown character of the Cu-doped samples, without any annealing treatment, rules out any correlation between the 1.5896 eV PL line and annealing processes and attributes definitively this line to excitons bound to Cu Cd acceptors. Copper can be detected without any ambiguity in further technologic applications of CdTe to optoelectronic device purpose.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
