Abstract
In narrow quantum wells formed by semiconductor heterostructures the inhomogeneous in-plane distribution of barrier material can cause lateral localization of excitons. This effect is studied theoretically using a detailed model, in which the localized state of the correlated electron–hole pair is expanded in terms of free 2D exciton states, including also excited levels of the relative motion (multiband approximation). The barrier–well interface is realistically described by the occupation of the crystal lattice sites with the different types of cations (Al and Ga) contained in the heterostructure. We perform a dynamical Monte-Carlo simulation of the MBE growth process to obtain the atomic distribution in the vicinity of the interface. The effect of switching on the Ga flux at times of complete and incomplete deposition of the last barrier layer is investigated.
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