Abstract
Microphotoluminescence mapping measurements were performed on a (Cd,Mn)Te quantum well, iodine modulation-doped at about 10 1 0 cm - 2 . Intensity maps reveal dark lines with preferential directions [110] and [-110]. We attribute them to misfit dislocations propagating from substrate/buffer interface to the quantum well, as evidenced by a better spatial resolution observed at direct QW excitation compared to that at above-barrier energy. Photoluminescence spectra contain usual neutral (X) and negatively charged (X - ) exciton lines. Besides, a defect-related line (D) is observed at the low energy tail of the X - line. The presence of D line anticorrelates with that of X line, demonstrating an efficient trapping process of excitons at the defect centres. Lack of correlation between the X - and X intensities with direct excitation in the quantum well is interpreted as an evidence of electrostatic potential fluctuations.
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