Abstract

Photoluminescence characteristics as a function of temperature were investigated for Zn1−xMgxSe (0<x<0.63) and Cd1−xMgxSe (0<x<0.55) crystals grown by the high pressure Bridgman method. In the composition range investigated Cd1−xMgxSe crystallizes in a wurtzite structure while Zn1−xMgxSe crystallizes in sphelerite and wurtzite for Mg content lower and higher than 0.18, respectively. The temperature dependence of luminescence can be explained by taking into account, that statistical fluctuations of local composition in solid solutions cause spatial fluctuations of potential, leading to localization of excitons at low temperatures. This phenomenon strongly influences radiative recombination processes in such mixed semiconductors. All observed luminescence characteristics can be explained by this exciton localization model.

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