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Abstract
We have measured the fluctuation in local surface potential of GaNepitaxial films having two different types of nanostructure, as-grownislands or, etched pits, by Kelvin probe force microscopy. We found thatthe perimeters of as-grown islands and the internal walls of, etched pitshave lower surface potential as compared with the as-grown c-plane.The results show that the crystallographic facets tilted with respectto c-plane have higher work function and are electrically more activethan c-surface.
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