Abstract
Local structure around isoelectronic impurities (Ga:1.2×10 19 cm -3 , As:7.3 ×10 19 cm -3 ) doped in InP has been studied by fluorescencedetected extended x-ray absorption fine structure (EXAFS) using synchroton radiation. We find that the bond lengths of impurities in the dilute limit take values close to those in pure binary compounds, deviating from the interatomic distance of host lattice. Local distortion along the <111> direction gives rise to internal expansion or compression around impurities. Resulting structural disorder is discussed in relation to the local structure in (In, Ga)(As, P) quaternary alloys lattice-matched to InP.
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