Abstract
Local structural properties of wide-band-gap semiconductors, Zn1-xCdxTe (ZCT) crystals (x=0–0.25), were studied using X-ray absorption fine structure (XAFS) measurements at the Te L1- and Zn K-edges. A previous study by Liu et al. [rf1] reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when x≃0.05. The XAFS studies show that the disorder and the bond length of Te–Zn pairs have maximum values at about x=0.05. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te–Cd pairs is at least ∼0.2 Å longer than that of Te–Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.
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