Local spin susceptibility in the zero-gap-semiconductor state ofα−(BEDT-TTF)2I3probed byC13NMR under pressure

Abstract

$\ensuremath{\alpha}\text{\ensuremath{-}}{(\text{BEDT-TTF})}_{2}{\text{I}}_{3}$ has a double column structure with three crystallographically independent molecules, A, B, and C, and becomes an insulator below 135 K due to a charge-ordering (CO) transition. The CO state is suppressed under pressure and shows weak temperature dependence of the electrical resistance. The decline of the carrier density is observed over 1.8 GPa, suggesting a zero-gap-semiconductor state under high pressure. The local susceptibility on each site provides important information about the electronic band structure. In our previous work, molecular site B became spin poor and molecular site C became spin rich in the metallic state, suggesting the disproportionation of the local spin density. Therefore, it is worthwhile to investigate the behavior of the electron properties of each molecular site. We accessed the $^{13}\text{C}\text{-NMR}$ in this salt at ambient pressure and at 2.1 GPa. The analysis of the local spin susceptibility suggests that the disproportionation of the spin susceptibility at 2.1 GPa is enhanced from that at ambient pressure, and the spin susceptibility vanishes at low temperature at 2.1 GPa. Moreover, from the temperature dependence of ${T}_{1}^{\ensuremath{-}1}$, we obtain the relation of ${T}_{1}^{\ensuremath{-}1}\ensuremath{\propto}{T}^{3.1}$.