Abstract
The growth morphology and electronic structure of the Bi/InP(110) interface is investigated and compared to the Bi/GaAs(110) system. High-resolution synchrotron radiation core level and valence band photoelectron spectroscopy is employed in the determination of the local order, epitaxy, and electronic structure development for these systems. Valence band spectra show the development of a density of states between the InP valence band maximum and the Fermi level in the coverage range 0–1 monolayer. These Bi-derived states show a 450 meV gap between the onset of emission and the Fermi level indicating the first monolayer is semiconducting. At all coverages beyond 1 monolayer, the Bi-derived states show emission at the Fermi level. Core-level intensity attenuation profiles indicate a Stranski–Krastanov growth mode. Computer fitting of the Bi 5d core level shows two bonding sites for Bi on the surface, with a third Bi 5d component at all coverages above 1 monolayer. A zigzag chain model used for the Bi/GaAs(110) system is proposed as an appropriate model for the Bi/InP(110) interface.
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