Abstract
The key objective of this study is to investigate the local mismatch of pre and post multilayer structure on the active devices. Five pre and post multilayer structure pHEMTs on the same wafer within the same cell between adjacent devices are considered. As the study of local mismatch ensures good yields and a way to gain insights about the technology various comparisons are made including the effects of multilayer structuring. The threshold voltage, built-in potential and the net doping concentration of the 2-DEG of the devices are extracted through capacitance-voltage data. The underlying electrical parameter of the transistors as well as the RF figure of merit has been analyzed. The microwave noise related parameters namely minimum noise figure, associate gain, noise resistance, magnitude of the optimum reflection are also discussed and investigated. Centre-to-edge mismatch results in minor variation in performance between devices. These studies would help within the advancement of solid, proficient and low cost generation of future compact structure in 3-D multilayer MMICs.
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