Abstract
We report on the inhomogeneity of the internal bias according to the Zr alloy concentration confirmed by the ferroelectric switching dynamics of ${\mathrm{Hf}}_{1\ensuremath{-}x}{\mathrm{Zr}}_{x}{\mathrm{O}}_{2}$ thin films. The analytic model for the internal bias was considered in terms of the dipole-dipole interaction accompanied by Zr concentration variation. The ferroelectricity and switching dynamics of ${\mathrm{Hf}}_{1\ensuremath{-}x}{\mathrm{Zr}}_{x}{\mathrm{O}}_{2}$ thin films were investigated using conventional electrical measurements and local piezoresponse microscopy. Analysis of static and dynamic polarization reversal revealed a correlation between the activation field for polarization switching and Zr concentrations through the variation in local ferroelectric coercivity and the characteristic ferroelectric switching time. The spatially inhomogeneous local built-in electric field was attributed to the defect interaction in the ${\mathrm{Hf}}_{1\ensuremath{-}x}{\mathrm{Zr}}_{x}{\mathrm{O}}_{2}$ thin films.
Published Version
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