Abstract
AbstractThe optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.
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