Abstract
We have investigated the local electrical and structural properties of threading dislocations (TDs) in Na-flux-grown GaN bulk single crystals that consist entirely of c-plane growth sectors. Conductive atomic force microscopy analysis of Schottky-like contacts locally fabricated on dislocation-related etch pits showed a variety of leakage current under reverse bias conditions. Microstructural analysis around TDs revealed a correlation between the current leakage and the structure of the TDs and their surroundings. Microscale faceted growth sectors with a higher oxygen impurity concentration locally formed in the vicinity of TDs had a larger influence on the current leakage than the structure of TDs.
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