Abstract
Local cathodoluminescent (CL) method has been used for the investigation of the luminescent properties of multilayer heterostructure (ZnMgSSe–CdSe) and a structure for HEMT transistors based on GaAs–Al x Ga(1−x)As–In x Ga(1−x)As. One of the most important possibilities of the cathodoluminescent method is that of depth examination of the emission properties of semiconductors structures. The electron energy changing from 1 to 30 keV, the cathodoluminescence emission generation depth varies from 10 nm to several microns, depending on the materials. This permits one to study the luminescent properties of multilayer structure with depth. Our investigation showed that CL method can be used not only for study the luminescent properties of different semiconductors layers but for the characterization of the charge carriers transport in such multilayer structure and investigation of the potential profile of the quantum channel.
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