Abstract
The specific features of application of the cathodoluminescence (CL) method for the diagnostics of Si-SiO2 structures, related to the possibility of forming luminescence centers directly when recording CL spectra, are considered. The CL efficiency is shown by the example of the effect of γ irradiation on the properties of Si-SiO2. A model of the breakup of Si-OH groups in the oxide layer as a result of γ irradiation is proposed and confirmed by independent electrical measurements.
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