Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction

Abstract

The pump and probe technique in Raman spectroscopy of the E2 (high) mode is exploited to uncover the enhancing factor of the phonon transport across Ga1−xInxN/GaN interfaces. Two samples are investigated: one with a uniform x of 0.09 and another one with a graded variation in x from 0.17 to 0 along the depth direction. Lateral phonon transport is obtained by scanning the 532-nm probing laser from the irradiation position of the 325-nm heating laser. No difference in the lateral diffusion length is observed between the two samples, while the transport probability across the interface is higher for the sample with the graded variation in x than the sample with the uniform x of 0.09. The microscopic images of the decrease in the mode energy or the increase in temperature of the GaN layer reveal that the local phonon transport across the heterointerface is enhanced in regions with low differences in the phonon mode energy between the GaN and GaInN rather than the difference in crystal quality.