Abstract

We investigated the local atomic structure in GeSi alloy experimentally and theoretically. Extended X-ray absorption fine structure measurements in Czochralski-grown Ge 1− x Si x bulk alloys showed that the GeGe and GeSi bond lengths maintain distinctly different lengths and vary linearly with alloy composition across the whole composition range 0< x<1. This is in good agreement with the expectation derived from ab initio electronic structure calculations. The result indicates that the bond lengths and bond angles are distorted with alloy composition in GeSi.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.