Abstract
AbstractThe influence of the Fröhlich interaction between charge carriers bound at impurities and LO‐phonons in polar semiconductors is considered within second‐order perturbation theory taking into account the possibility of degenerate unperturbed electronic ground states. From the general theory presented here changes of the bare electronic excitation energies (bound polaron excitations), Jahn‐Teller like splittings of degenerate ground states and the formation of bound to neutral impurities phonons (dielectric modes) can be obtained. The application of the general theory to special cases and experimental results will be published in a forthcoming paper.
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