Abstract
AbstractIn a previous paper the Fröhlich interaction between charge carriers bound at impurities and LO‐phonons in polar semiconductors is considered within second‐order perturbation theory. Here special cases including the possibilities of degenerate electronic ground and excited states are discussed. Jahn‐Teller like splittings of degenerate ground states as well as Lamb‐Retherford like splittings of degenerate excited states are obtained. Besides renormalized electronic excitations the solution of the eigenvalue problem yields phonons bound to neutral imuprities (dielectric modes). Results of Raman spectroscopic determinations of these modes in GaP:S, Te, Si, and Sn are presented and their experimental binding energies are compared with theoretical results.
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