Abstract

Electronic and optical properties with the inclusion of effects of phonons, LO and SO, in an InAs0.8P0.2/InP quantum wire are investigated. The phonon dependent electronic properties are obtained using variational formulism based on the Lee-Low Pines transformation and the optical properties are calculated using the compact density matrix method with the iteration process. The phonon induced optical gain as a function of photon energy is found. The polaronic effect is included through the potential derived by Aldrich and Bajaj. The obtained results bring out that these properties are much influenced by the polaronic corrections especially in the narrow quantum wire.

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