Abstract
An extension of Landau–Lifshitz–Bloch (LLB) equation is used to describe the behavior of single-domain particles under the influence of magnetic fields and polarized currents at elevated temperatures. We prove that using such a model, which takes into account the longitudinal magnetization relaxation, together with the consideration of the quartic crystalline anisotropy term, a number of recent experimental results can be explained concerning the free layer characteristic critical curves of spin valves commonly used in spin electronics. These results are of paramount importance for heat assisted magnetic recording (HAMR) processes in hard-drives or in new memory systems like the spin-transfer-torque magnetic random access memory (HA-STTMRAM) with the aim of increasing data density writing while avoiding superparamagnetic limit.
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