Abstract

Direct inkjet printing of sub-100 nm nanoscale gaps, without the need for any high-resolution lithography, is made possible by a novel self-aligned printing method (see Figure). The benefits of this method are demonstrated by fabrication of all-polymer transistor circuits, which exhibit switching speeds at least two orders of magnitude higher than those previously reported for inkjet-printed polymer devices.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call