Abstract
AbstractA class of negative electron‐beam resists is described which have excellent lithographic characteristics. The resists are copolymers of glycidyl methacrylate and ethyl acrylate. Their molecular weights, epoxy contents, and polydispersivities can be controlled to give an adjustable range of electron sensitivity and contrast. The copolymers are compared to other epoxy containing, negative electron‐beam resists.Micrography of resist profiles generated from a single line scan of the electron beam have been used to illustrate the complex interaction of accelerating voltage of the electron beam and resist contrast on resolution. Optical gratings made from single line scans of the beam have feature sizes less than 300 nm in the resist, etched metals, and dielectrics.
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