Lithographically Defined Si Nanowire Field Effect Transistors for Biochemical Sensing

Abstract

A process integration of e-beam lithography, plasma etching, and Si processing have been developed to pattern Si nanowires on crystalline Si on insulator wafers. Si nanowires of 12-50 nm linewidth, 30-70 nm height, and 10 mum length have been made. Using these Si nanowires as conducting channels, field effect transistors using the back Si substrate as gate have been fabricated. Good I-V characteristics have been obtained. With the back-gate configuration, the surface of Si nanowires can be functionalized for biochemical sensing applications.