Abstract
AbstractCharacteristics of traveling‐wave phase modulators fabricated with indium tinoxide (ITO) and silicon dioxide (SiO2) as buffer layers on Z‐cut LiNbO3 substrate are compared at the wavelength 0.6328 μm. For those with an ITO buffer layer, a half‐wave voltage of 8.1 V and a bandwidth of 10 GHz are obtained, whereas for those with an SiO2 buffer layer, a half‐wave voltage of 9.6 V and bandwidth 11 GHz are obtained. Hence the use of an ITO buffer layer may cause a reduction of the driving voltage and be capable of broadband operation.
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